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绝缘层的击穿特性是影响半导体器件成品率和可靠性的重要工艺参数。通常的介质击穿测量,往往在第一次发生击穿后便因同衬底短路而无法继续进行。同时,由于介质中存在局部缺陷,首次击穿又往往发生在这些低击穿的薄弱点上,因而掩盖或者失去了对其最终或者本征击穿强度的真实了解。自愈击穿仪不仅克服了上述缺点,而且还能对介质中存在的局部缺陷密度进行定量或半定量的分析,从而为研究、考察不同介质层的缺陷密度、击穿特性及其与沉积或生长条件以及器件成品率、可靠性之间的关系提供有力手段。
Breakdown characteristics of the insulation layer is an important process parameters that affect the yield and reliability of the semiconductor device. The usual dielectric breakdown measurement, often after the first breakdown occurred due to short circuit with the substrate and can not continue. At the same time, due to the presence of localized defects in the medium, the first breakdown often occurs at these weak spots of low breakdown, masking or losing a real understanding of its ultimate or intrinsic breakdown strength. Self-healing breakdown not only overcome the above shortcomings, but also on the medium of the local defect density quantitative or semi-quantitative analysis, so as to study and investigate the different dielectric layer defect density, breakdown characteristics and deposition or Growth conditions and device yield, the relationship between reliability provides a powerful tool.