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测试了硅衬底垂直结构芯片在不同空间角度上的电致发光(EL)谱.指出硅衬底垂直结构InGaAlN多量子阱发光二极管的EL谱中多个峰型来源于干涉现象,而不是来自于多个阱层的发光.干涉峰的疏密反映p型层厚度的一致性,干涉现象的强弱反映p型欧姆接触层反光能力的强弱.芯片法线方向附近发光最强干涉现象最明显,芯片侧边的发光几乎没有干涉现象且发光强度最弱.
The electroluminescent (EL) spectra of silicon vertical structure chips at different spatial angles were tested.It was pointed out that the multi-peak shape of the InGaAlN multi-quantum well light emitting diode with vertical silicon substrate originated from the interference phenomenon rather than from the interference The emission of light in a plurality of well layers, the density of interference peaks reflects the consistency of the thickness of the p-type layer, the intensity of the interference phenomenon reflects the strength of the p-type ohmic contact layer reflective capability, the strongest interference phenomenon Obviously, the side of the chip light almost no interference and the luminous intensity of the weakest.