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Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.
Al and F co-doped ZnO (ZnO: (Al, F)) thin films on glass substrates were prepared by the RF magnetron sputtering with different F doping contents. Structural and Electrical Properties of the deposited films are sensitive to the F doping content. The X-ray analysis shows that the films are c-axis orientated along the (002) plane with the grain size ranging from 9 nm to 13 nm. Micrographs obtained by the scanning electron microscope (SEM) show a uniform surface. The best films were obtained with a resistivity of 2.16 × 10 -3 Ω · cm, while the high optical transmission was 92.0% at the F content of 2.46 wt.%.