据东京农艺和工艺大学以及日本化工、塑料及电子材料制造商——德山公司的研究人员声称,采用“自分离”的方法可制作出独立的AlN。在温度冷却到室温时,AlN薄膜从其蓝宝石衬底上分离开的这项技术有望提供一种较为简单的制作AlN衬底的方法。这些AlN衬底可作为深紫外LED、高功率高 According to researchers at Tokyo University of Agronomy and Polytechnic and Japanese manufacturer of chemical, plastics and electronic materials, Tokuyama, a separate AlN can be produced using a “self-detached” method. This technique of separating the AlN film from its sapphire substrate when cooled to room temperature is expected to provide a simpler method of making an AlN substrate. These AlN substrates act as deep UV LEDs with high power