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结合X射线荧光分析和同步辐射单色器对窄光谱带宽多层膜的需求,开展了窄光谱带宽刻蚀多层膜光栅的理论和实验研究。用平均密度法从理论上阐明将多层膜刻蚀成不同刻蚀比的多层膜光栅后,光谱分辨率将得到提高。用磁控溅射方法制备了W/C多层膜,并用常规的光刻工艺对其进行刻蚀,得到了刻蚀后的多层膜光栅。掠入射X射线衍射测量表明,刻蚀后多层膜的衍射峰位置向小角方向移动,多层膜光栅没有改变剩余多层膜的结构,而且带宽减小,光谱分辨率得到提高,说明实验采用的工艺方法和工艺路线可以满足制作窄光谱带宽刻蚀多层膜光栅的要求,为今后进一步研究实用化元件打下了基础。
Combining with the demand of X-ray fluorescence analysis and synchrotron monochromator for narrow-bandwidth multi-layer films, theoretical and experimental studies on narrow-band width multi-layer grating etching have been carried out. Using the average density method to theoretically elucidate the multilayer film etching into a different etching ratio of the multilayer grating, the spectral resolution will be improved. The W / C multilayers were prepared by magnetron sputtering, and were etched by conventional photolithography to obtain the etched multilayer film grating. Grazing incidence X-ray diffraction measurements show that the diffraction peak position of the multi-layer film after etching moved to a small angle, the multilayer film grating does not change the structure of the remaining multi-layer film, and the bandwidth is reduced, the spectral resolution is improved, indicating that the experiment The process method and process route can meet the requirement of making a narrow spectral bandwidth etching multilayer film grating and lay a foundation for further research on practical components in the future.