论文部分内容阅读
采用阴极恒电压电沉积法在氧化锡铟透明导电玻璃表面沉积了Bi2S3薄膜,用X射线衍射、X射线光电子能谱仪、原子力显微镜、场发射扫描显微镜对制备薄膜的结构和形貌进行了表征。通过对不同沉积时间下制备薄膜的表面形貌分析,初步探讨了电沉积法制备Bi2S3薄膜的生长机理。结果表明:所制备的薄膜由正交相Bi2S3组成,无杂质相;薄膜表面形貌呈现出沿c轴取向的竹笋状的三维结构;随着沉积时间延长,薄膜结晶性能先提高后下降;其生长模式是基于电场力对离子的作用而诱导产生的垂直于基板方向的层状生长。
Bi2S3 thin films were deposited on indium tin oxide transparent conductive glass by cathodic constant voltage electrodeposition. The structure and morphology of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and field emission scanning microscopy . The growth mechanism of Bi2S3 thin films prepared by electrodeposition was preliminarily discussed by analyzing the surface morphology of the prepared films at different deposition times. The results show that the prepared thin films are composed of the phase Bi2S3 with no impurity phase. The surface morphology of the films shows a bamboo-shaped three-dimensional structure oriented along the c-axis. With the deposition time prolonged, the crystallinity of the films first increases and then decreases. Growth mode is based on the action of ions on the ion induced by the substrate perpendicular to the direction of the layered growth.