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选取Si太阳电池与线阵CCD器件,进行了光电器件辐射效应的数值分析与模拟试验方法研究。分析了光电器件电离效应和位移损伤机理,利用二维器件模拟软件MEDICI,模拟了1 MeV电子对n/p型硅太阳电池主要输出参数的影响,包括开路电压Voc、短路电流Isc和最大输出功率Pmax。在一定范围内,计算结果与文献实验数据符合较好。建立了线阵CCD器件辐照效应离线测量系统。利用60 Coγ源,进行了商用器件的总剂量效应试验,给出了暗电流信号和饱和电压信号的变化曲线。
Si solar cells and linear array CCD devices were selected for the numerical analysis of the radiation effects of photovoltaic devices and simulation test methods. The effects of 1 MeV electrons on the main output parameters of n / p-type silicon solar cell were simulated by the two-dimensional device simulation software MEDICI, including the open circuit voltage Voc, the short-circuit current Isc and the maximum output power Pmax. In a certain range, the calculated results are in good agreement with the experimental data in the literature. The offline measurement system of the radiation effect of the linear array CCD device was established. The total dose effect of commercial devices was tested by using 60 Coγ sources, and the curves of dark current signal and saturation voltage signal were given.