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以巯基丁二酸为修饰剂制备了CdTe量子点(CdTe QDs),采用微波辐射法还原氧化石墨且通过加入聚二烯丙基二甲基氯化铵(PDDA)得到带正电荷的石墨烯,并与带负电荷的CdTe QDs通过静电作用结合得到石墨烯-CdTe量子点复合材料(CdTe QDs/RGO-PDDA)复合物。研究了不同取样时间下CdTe QDs的电化学发光性能,并考察了扫描速度、共反应剂浓度和缓冲溶液pH值对CdTe QDs电化学发光强度的影响,通过对CdTe QDs/RGO-PDDA复合物电化学发光的研究,得出石墨烯的加入可以提高CdTe QDs电化学发光的强度和稳定性;最后基于CdTe QDs/RGO-PDDA构建了对Ag~+检测的电化学发光传感器,该传感器具有较强的抗干扰性,并得出线性回归方程为Y=10007.25-172.12X,线性回归系数R~2=0.9861。
CdTe quantum dots (CdTe QDs) were prepared by using mercaptosuccinic acid as a modifier, graphite oxide was reduced by microwave irradiation and positively charged graphene was obtained by adding polydiallyl dimethyl ammonium chloride (PDDA) The CdTe quantum dots (CdTe QDs / RGO-PDDA) composites were obtained by electrostatic interactions with negatively charged CdTe QDs. The electrochemical luminescence properties of CdTe QDs under different sampling times were investigated. The effects of scanning speed, co-reactant concentration and buffer solution pH on the chemiluminescence intensity of CdTe QDs were investigated. The CdTe QDs / RGO-PDDA complex Chemiluminescence study shows that the addition of graphene can improve the intensity and stability of CdTe QDs electrochemiluminescence. Finally, an electrochemiluminescence sensor based on CdTe QDs / RGO-PDDA for Ag ~ + detection has been developed. The sensor has a strong The results showed that the linear regression equation was Y = 10007.25-172.12X and the linear regression coefficient was R ~ 2 = 0.9861.