构造了由普通材料A(SiO_2)和电单负材料B组成的(AB)~N(BA)~N型一维光子晶体.数值计算表明原禁带的1907.3 nm处出现了一个十分尖锐的隧穿模.入射角增加,该隧穿模的透射率和半峰全宽度均保持不变,但位置发生蓝移,入射角在15°—65°的区间内,移动率的绝对值|dλ/dθ|较大.当B介质的磁导率μB从5增加到10时,只是隧穿模的位置发生了红移.介质的几何厚度增加时,隧穿模的透射率不变,但其位置红移明显,半峰全宽略有增加. (AB) ~ N (BA) ~ N type one-dimensional photonic crystals composed of normal material A (SiO 2) and electrical material negative material B. The numerical calculation shows that a very sharp tunnel appears at 1907.3 nm in the original band The incident angle increases, the tunneling mode transmittance and full width at half maximum remain unchanged, but the location of blue shift, the angle of incidence in the range of 15 ° -65 °, the absolute value of the mobility | dλ / dθ | is larger.When the permeability of B medium increases from 5 to 10, only the position of the tunneling mode redshift.When the geometrical thickness of the medium increases, the transmittance of the tunneling mode does not change, but its position Clear redshift, a slight increase in full width at half maximum.