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一、引言 近年来,用平面台式工艺制作硅低频大功率管在我国发展很快,由于采用台面结构消除了平面结的弯曲部份,结变成平坦的平面,对同一电阻率,除了双面保护环新结构外,台面管的击穿电压是最高的。但是由于磨角腐蚀以形成台面而使PN结裸露在外,这就带来了台面容易沾污的问题,使PN结表面在器件工作温度下会产生较大的漏电流,使击穿电压下降因而器件容易穿通。所以对台面必须进行保护,从而使器件在较高的温度和一定的漏电流条件下具备较高的击穿电压,亦即使器件能有较好的使用性能和较高的可靠性。
I. INTRODUCTION In recent years, the production of silicon low-frequency high-power tubes with flat tabletop technology has developed rapidly in our country. Since the mesa structure is used to eliminate the bending part of the plane junction, the junction turns into a flat plane. For the same resistivity, The new structure of the guard ring, the table tube breakdown voltage is the highest. However, the PN junction is exposed by the angle corrosion to form the mesa, which brings about the problem that the mesa is easily fouled. As a result, the surface of the PN junction generates a large leakage current at the device operating temperature and the breakdown voltage is decreased The device is easy to punch through. So the table must be protected, so that the device at higher temperatures and a certain leakage current conditions have higher breakdown voltage, even if the device can have better performance and high reliability.