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The films of few-layer graphene are formed through laser exfoliation of a highly ordered pyrolytic graphite(HOPG), without a catalytic layer for the growth process. The femtosecond(fs) laser exfoliation process is investigated at different laser fluences and substrate temperature. For fs laser exfoliation of HOPG, the few-layer graphene is obtained at 473 K under an optimal laser fluence. The formation of few-layer graphene is explained by removal of intact graphite sheets occurred by an optimal laser fluence ablation. The new insights may facilitate the controllable synthesis of large area few-layer graphene.
The films of few-layer graphene are formed through laser exfoliation of a highly ordered pyrolytic graphite (HOPG), without a catalytic layer for the growth process. The femtosecond (fs) laser exfoliation process is investigated at different laser fluences and substrate temperature. For fs laser exfoliation of HOPG, the few-layer graphene is obtained at 473 K under an optimal laser fluence. The formation of few-layer graphene is explained by removal of intact graphite sheets occurred by an optimal laser fluence ablation. the controllable synthesis of large area few-layer graphene.