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建立一种新模型 ,模拟超薄晶体膜生长过程 .通过引入网格和俘获截面的概念来归一化处理错综复杂的原子间相互作用 ,研究了扩散、衬底温度等因素对Ge Si超薄晶体膜生长形式的影响
A new model was established to simulate the growth process of ultra-thin crystal films. The concept of grid and capture cross section was used to normalize the intricate interatomic interaction. The effect of diffusion and substrate temperature on the growth of Ge Si thin film The impact of growth patterns