论文部分内容阅读
本文报道了用红外透射光谱测量重掺杂化合物半导体n-GaAs和n-InP 载流子浓度的研究结果.给出了载流于浓度N和透射光谱截止波长λ_c的关系曲线,对应的经验公式为:对于 n-GaAs,N=1.09 × 10~(21)λ_c~(3.0623);n-InP,N=3.58 × 10~(20)λ_c~(-2.6689).本方法载流子浓度测量范围为 1.0×10~(17)≤N≤2.0 ×10~(19)cm~(-3),测量误差 ±10～15％.文中对测量条件进行了讨论,并给出了GaAs:Si样品载流子浓度径向分布的测量结果.
In this paper, we report the results of infrared transmission spectroscopy for the measurement of carrier concentrations of n-GaAs and n-InP in heavily doped compound semiconductors. The relationship between the carrier concentration at the concentration N and the cutoff wavelength λ_c of the transmission spectrum is given. The corresponding empirical formula Is as follows: N = 1.09 × 10 ~ (21) λ_c ~ (3.0623); n-InP, N = 3.58 × 10 ~ (20) λ_c ~ (-2.6689) for n-GaAs. The measurement error is ± 10 ~ 15% for 1.0 × 10 ~ (17) ≤N≤2.0 × 10 ~ (19) cm ~ 3.The measurement conditions are discussed in this paper, Radial distribution of the concentration of the results of the measurement.