论文部分内容阅读
实验表明,SiO_2/Si体系扩金以后,其MOS结构的C-V曲线,明显的向正压方向平行移动,显示了扩金引入的负电荷效应。变化的一般情况如图1所示。为了观察该效应随热处理条件的变化,进而取得对其作用机制的认识,我们在不同气氛(氮、氢、氯)不同温度和不同时间下,对金界面电荷的变化进行了实验考察。 一、实验 MOS电容器样品是由电阻率为9.1～13Ω·cm的直拉P型Si单晶制成的。位错密度不超过300/cm~2。垂直于<111>且向<110>偏3°切片。
The experimental results show that the C-V curve of the MOS structure moves in parallel to the positive pressure direction after the deposition of the SiO 2 / Si system, showing the negative charge effect introduced by the gold doping. The general situation of change is shown in Figure 1. In order to observe the effect of this effect on the change of heat treatment conditions and then to gain an understanding of its mechanism of action, we investigated the change of the charge on the gold interface at different temperatures and time intervals under different atmospheres (nitrogen, hydrogen and chlorine). First, the experimental MOS capacitor sample is made of a Czochralski P-type Si single crystal having a resistivity of 9.1-13? Cm. Dislocation density does not exceed 300 / cm ~ 2. Perpendicular to <111> and sectioned 3 ° to <110>.