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利用脉冲准分子激光淀积（ＰＬＤ）方法，在Ｓｉ基片上制备了ＢＩＴ／Ｓｉ〔１００〕、ＰＺＴ／ＢＩＴ／Ｓｉ〔１００〕和ＢＩＴ／ＰＺＴ／ＢＩＴ／Ｓｉ〔１００〕铁电薄膜。用ＸＲＤ分析了多层铁电薄膜的晶相结构；用Ｓａｗｙｅｒ－Ｔｏｗｅｒ电路研究了这些单层和多层铁电薄膜的铁电性能。结果表明，单层ＢＩＴ的矫顽场Ｅｃ为４ｋＶ／ｃｍ，剩余极化强度为３．４μＣ／ｃｍ２；ＰＺＴ／ＢＩＴ的矫顽场Ｅｃ为８２ｋＶ／ｃｍ，剩余极化强度Ｐｒ为３６μＣ／ｃｍ２；ＢＩＴ／ＰＺＴ／ＢＩＴ夹层铁电薄膜的矫顽场Ｅｃ为５７ｋＶ／ｃｍ，剩余极化强度Ｐｒ为２９μＣ／ｃｍ２。最后讨论了薄膜的铁电性能与多层结构的关系
BIT / Si [100], PZT / BIT / Si [100] and BIT / PZT / BIT / Si [100] ferroelectric thin films were fabricated on Si substrates by pulsed excimer laser deposition (PLD) The crystal structure of multilayered ferroelectric thin films was analyzed by XRD. The ferroelectric properties of these single and multilayered ferroelectric thin films were investigated by Sawyer-Tower. The results show that the coercive field Ec of single layer BIT is 4kV / cm and the remanent polarization is 3.4μC / cm2. The coercive field Ec of PZT / BIT is 82kV / cm and the remanent polarization Pr is 36μC / cm2. The coercive field Ec of BIT / PZT / BIT interlayer ferroelectric thin film is 57kV / cm and the remanent polarization Pr is 29μC / cm2. Finally, the relationship between the ferroelectric properties and the multi-layer structure of the film is discussed