论文部分内容阅读
硅片或硅块的电阻率与掺杂浓度的关系模型不适用于补偿硅,如精纯冶金级硅(UMG-Si)。目前尚无合适的理论模型可以准确解释补偿硅实验和观测结果间存在的差异。基于电解液理论提出一种包含电离平衡常数的新方法,可以得到单掺杂硅的电荷载子迁移率Thurber曲线。当掺杂硅中包含一种以上掺杂物质时,需要采用数值算法来解决多重平衡系统。研究表明这类系统表现出一种缓冲溶液的特定行为。通过计算化合物的热力学参数获得平衡常数,并利用现有的电化学知识(Nerust方程和Butler-Volmer方程)提出一个普遍理论。因为硅/掺杂物系统构成一个弱电解质固溶体,电解质溶液理论为太阳能电池行为的认知提供了一个很好的物理模型和数学框架。
The resistivity versus doping concentration of the silicon or silicon block model is not suitable for compensating silicon, such as UMG-Si. At present, there is no suitable theoretical model to accurately explain the difference between the silicon experiment and the observation results. Based on the theory of electrolyte, a new method of ionization equilibrium constants is proposed, and the Thurber curve can be obtained for charge carrier mobility of single-doped silicon. When doped silicon contains more than one dopant, a numerical algorithm is needed to solve the multiple equilibrium system. Research shows that such systems exhibit a specific behavior of buffer solutions. The equilibrium constants are obtained by calculating the thermodynamic parameters of the compounds and a general theory is developed using existing electrochemical knowledge (Nerve’s equation and Butler-Volmer’s equation). Because the silicon / dopant system constitutes a weak electrolyte solid solution, the electrolyte solution theory provides a good physical model and mathematical framework for understanding the behavior of solar cells.