利用模拟软件 MEDICI对碳化硅混合 Pi N / Schottky二极管 ( MPS)的输运机理及伏安特性进行了模拟 .输运机理的模拟结果表明 MPS的工作原理是正向肖特基起主要作用 ,而反向时 PN结使漏电流大大减小 .伏安特性的模拟结果表明 MPS的正向压降小 ,电流密度大 ,在 2 V正向偏压下达 10 - 5A/μm ,反向漏电流小 ,击穿电压高( 2 0 0 0 V左右 ) ,可以通过改变肖特基和 PN结的面积比来调整 MPS的性能 ,与硅 MPS、碳化硅 PN结以及碳化硅肖特基二极管相比具有明显的优势 ,是理想的功率整流器 The transport mechanism and the volt-ampere characteristic of silicon carbide mixed Pi N / Schottky diode (MPS) were simulated by simulator MEDICI.The simulation results of transport mechanism show that the working principle of MPS is the main role of forward Schottky and the reverse The results show that the forward voltage drop of MPS is small, the current density is large, the forward bias of 2 V is 10 - 5A / μm, the reverse leakage current is small, The breakdown voltage is high (around 2000 V) and the performance of the MPS can be tuned by changing the area ratio of the Schottky and PN junctions as compared to silicon MPS, silicon carbide PN junctions, and silicon carbide Schottky diodes The advantage is the ideal power rectifier