把众所周知的集成电路工艺——互补MOS和硅栅——相结合所产生的微功率半导体工艺对电路的开关速度和功耗都做了理想的折衷。这些硅栅互补MOS逻辑电路的静态功耗为毫微瓦,且电源电压下降到1伏左右仍能工作。这种新的电路系列目前已投产,并已使用于电池供电的可移动的通讯系统、手提计算器或电子手表中,在这些使用中实质上要求是小功率。多晶硅的栅电极与通常的金属栅相比有两个优点:较低的阈值电压和较低的电容。阈值电压之所以低,是因为多晶硅功函数与通常的功函数相比与单晶硅衬底功函数更接 The micro-power semiconductor process resulting from the well-known integrated circuit process - Complementary MOS and Silicon Gate - makes the ideal tradeoff for switching speed and power consumption. The static power consumption of these silicon gate complementary MOS logic circuits is nanowatts, and the power supply voltage dropped to 1V or so still work. The new circuit series is currently in production and has been used in battery-powered portable communication systems, laptop calculators or electronic watches, where the low power requirement is essentially required. The gate electrode of polysilicon has two advantages over the usual metal gate: lower threshold voltage and lower capacitance. The reason why the threshold voltage is low is because the polysilicon work function is more connected with the work function of the single-crystal silicon substrate than the usual work function