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Fe doping is an effective method to obtain high resistivity Ga N epitaxial material.But in some cases,Fe doping could result in serious deterioration of the Ga N material surface topography,which will affect the electrical properties of two dimensional electron gas(2DEG) in HEMT device.In this paper,the influence of Fe doping on the surface topography of Ga N epitaxial material is studied.The results of experiments indicate that the surface topography of Fe-doped Ga N epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of Ga N materials.The Ga N material with good surface topography can be manufactured when the Fe doping concentration is 91019cm3.High resistivity Ga N epitaxial material which is 1109 cm is achieved.
Fe doping is an effective method to obtain high resistivity Ga N epitaxial material. But in some cases, Fe doping could result in serious deterioration of the Ga N material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of Ga N epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped Ga N epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of Ga N materials. Ga N material with good surface topography can be manufactured when the Fe doping concentration is 91019 cm3.High resistivity Ga N epitaxial material which is 1109 cm is achieved.