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本文利用非对称ｐｉｎ二极管模型，对新型多晶硅接触薄发射极晶闸管关断时间和通态压降之间的折衷关系进行了较为详细的理论分析和实验研究，并与常规结构进行了比较，数值计算和实验结果表明，在合适的薄发射区厚度和杂质总量下，不但关断时间较常规结构缩短约１．５倍的因子，而且通态压降也低于常规结构；更有意义的是，当ｎＢ基区少子寿命减小到合适值时，关断时间进一步缩短到常晶闸管的１／２．５～１／３，而通态特性没有恶化。
In this paper, we use the asymmetric pin diode model to conduct a more detailed theoretical analysis and experimental study on the trade-off relationship between the off-time and the on-state voltage drop of the new polycrystalline silicon contact thin-emitter thyristor. Compared with the conventional structure, the numerical calculation The experimental results show that not only the factor of about 1.5 times the turn-off time is shortened than that of the conventional structure but also the turn-on voltage drop is lower than that of the conventional structure at the suitable thickness of the thin emission region and the total amount of impurities. More importantly, , When the life of nB base minority son is reduced to the appropriate value, the turn-off time is further shortened to 1 / 2.5 ~ 1/3 of the constant thyristor, and the on-state characteristic is not deteriorated.