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采用金属有机化学气相沉积法制备了ZnO和ZnO∶Ni薄膜,并对它们的结构、光学和电学特性进行了对比研究.通过扫描电子显微镜(SEM)和X射线衍射(XRD)对薄膜的表面形貌和晶体结构进行了分析,结果表明,Ni元素的掺杂虽然降低了薄膜的晶体质量,但并未改变ZnO的纤锌矿结构.通过紫外-可见分光光度计对薄膜的光学特性进行了测试与分析,结果表明,ZnO∶Ni薄膜在可见光区的平均透过率可达90%,优于ZnO薄膜在可见光区的平均透过率(85%).霍尔(Hall)测试显示ZnO∶Ni薄膜的导电类型仍为n型,但其电阻率已经明显增加,载流子浓度也远低于未掺杂ZnO薄膜的载流子浓度,说明Ni元素的掺杂对ZnO薄膜的特性产生了很大影响.
ZnO and ZnO: Ni films were prepared by metal-organic chemical vapor deposition method, and their structures, optical properties and electrical properties were compared. Scanning electron microscopy (SEM) and X-ray diffraction The results show that although the doping of Ni element reduces the crystal quality of ZnO thin films, the wurtzite structure of ZnO is not changed.The optical properties of the films are tested by UV - visible spectrophotometer The results show that the average transmittance of ZnO: Ni film in the visible region can reach 90%, which is better than that of ZnO thin film in the visible region (85%). The Hall test shows that ZnO: Ni The conductivity type of the film is still n-type, but the resistivity has been significantly increased, the carrier concentration is also much lower than the carrier concentration of undoped ZnO film, indicating that the doping of Ni elements have a very strong Great influence.