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本文研究了CaS:Ce,Cl材料及其薄膜交流电致发光器件的发光特性。发现随Ce~(3+)掺杂浓度增加,发射谱峰向长波方向移动,同时Ce~(3+)的~2D(5d)→~2F_(6/2)(4f)的辐射跃迁相对变弱,而~2D(5d)→~2F_7/2(4f)的辐射跃迁则相对变强,在电致发光中,除出现正常的5d→4f电子态辐射跃迁外,还发现了其它一系列的发射谱峰。这些谱峰可能是由于Ce~(3+)处于周围不同数目硫空位的Ca位所造成的,器件的起亮电压为70伏,发光亮度约为8cd/m~2。
In this paper, the luminescent properties of CaS: Ce, Cl materials and their thin-film AC electroluminescent devices are studied. It is found that the emission peak shifts to the longer wavelength with the increase of the doping concentration of Ce 3+, and the radiation transition from ~ 2D (5d) → ~ 2F_ (6/2) (4f) to Ce ~ (3+) (5d) → ~ 2F_7 / 2 (4f) are relatively strong. In electroluminescence, besides the normal 5d → 4f electron radiation transitions, a series of Emission peak. These peaks may be due to the Ce ~ (3+) Ca vacancy around a number of sulfur vacancies caused by the device voltage of 70 volts, the luminous brightness of about 8cd / m ~ 2.