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本文报导了应用3T—HB法制备高纯度反掺锡砷化镓单晶的工艺和热处理对其电学性质的影响。实验结果表明,经过适当热处理砷化镓单晶液氮电子迁移率达51800cm~2/V·S。应用Brooks-Herring公式计算出浅施主浓度N_D和总受主浓度N_A。对N_D-N_A,Δμ-N_D作图,有助于看出n型砷化镓结构缺陷模型。根据热处理条件对电学性质的影响,对热处理机理和迁移率刽子手进行了讨论分析。
This paper reports the preparation of 3T-HB method of high purity anti-doping GaAs single crystal process and heat treatment of its electrical properties. The experimental results show that the electron mobility of liquid gallium arsenide single crystals reaches 51800cm ~ 2 / V · S after proper heat treatment. The Brooks-Herring formula was used to calculate the shallow donor concentration N_D and the total acceptor concentration N_A. For N_D-N_A, Δμ-N_D plot, help to see the n-type gallium arsenide structural defect model. According to the influence of heat treatment conditions on the electrical properties, heat treatment mechanism and mobilization executioner were discussed and analyzed.