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单片微波/毫米波集成电路(MMIC)技术是世界各国大力发展的无线通信系统技术,符合系统多功能混合集成的趋势,减小了系统的体积和重量,降低了成本,提高了系统的可靠性,在卫星通信、个人/移动通信等领域有很大的应用价值。 MMIC工艺选择范围因系统应用领域而定,种类包括硅器件(双极型、双极/MOS混合型),砷化镓MESFET,异质结双极型晶体管(HBT),高电子迁移率晶体管(HEMT)等。以个人/移动通信为例,日本大力发展的个人手持电话(PHS)系统频率为1.9 GHz,采用π/4相移的四相移相键控数字调制、时分多址、时分双工的方案。波特率384 K bps,信道间距为300 kHz,通话时间大于8小时,待机时间大于1周,依据低成本原则,尽量选用硅器件。射频部分功放,发射/接收开关和本机振荡器采用砷化镓MESFET工艺,其他部分采用硅工艺,基频部分则全部采作硅工艺。欧洲采用频率较低的0.7～0.5μm砷化镓MESFET工艺
The monolithic microwave / millimeter-wave integrated circuit (MMIC) technology is a wireless communication system technology developed by countries all over the world. It meets the trend of multi-functional system integration and integration, reduces the size and weight of the system, reduces the cost and improves the reliability of the system It has great application value in the fields of satellite communication and personal / mobile communication. The range of MMIC process options depends on the application area of the system. Types include silicon devices (bipolar, bipolar / MOS hybrid), gallium arsenide MESFET, heterojunction bipolar transistor (HBT), high electron mobility transistor HEMT) and so on. Take personal / mobile communication as an example. The frequency of personal handyphone (PHS) system in Japan is 1.9 GHz with phase-shift keying digital modulation of π / 4 phase shift, time division multiple access and time division duplexing. Baud rate 384 K bps, channel spacing of 300 kHz, talk time greater than 8 hours, standby time greater than 1 week, based on the principle of low cost, try to use silicon devices. RF part of the amplifier, transmit / receive switch and the local oscillator using gallium arsenide MESFET process, the other part of the silicon process, the fundamental part of all mining silicon process. Europe uses the less frequent 0.7 ~ 0.5μm GaAs MESFET process