用等离子体增强辉光放电法制成ａＳｉ∶Ｈ∶Ｏ薄膜，未经任何后处理过程，观察到峰值分别位于３４０—３７０，４００—４３０以及７４０ｎｍ的三个光致发光（ＰＬ）带．这种紫外光发射既强又稳定，其强度与薄膜中的氧含量紧密相关，而后者可通过薄膜淀积过程中施加在其衬底上的直流偏压进行控制．前两个ＰＬ峰来源于ａＳｉ∶Ｈ∶Ｏ中与氧有关的色心，而后一个ＰＬ峰则来源于嵌入ａＳｉ∶Ｈ∶Ｏ中纳米硅晶粒的量子尺寸效应和晶粒表面的色心两方面的作用 Plasma-enhanced glow discharge was used to fabricate a-Si: H: O thin films. Three photoluminescence (PL) bands with peaks at 340-370, 400-430 and 740 nm were observed without any post-treatment. This UV emission is both strong and stable, the intensity of which is closely related to the oxygen content in the film, which can be controlled by the DC bias applied to its substrate during the film deposition. The first two PL peaks originate from the oxygen-related color centers in a-Si: H: O, and the latter PL peak is derived from the quantum size effect of the nano-silicon grains embedded in a-Si: H: O and the grain surface The role of both the color center of the heart