论文部分内容阅读
在高压液封直拉(LEC)法生长InP单晶时,利用杂质效应掺入硫,可以有效地降低位错密度.当载流子浓度达3×10~(18) cm~(-3)时,位错密度降低到10~8cm~(-2)左右,此时补偿比在0.1～0.3之间.硫在InP中的有效分配系数为0.68.掺硫InP单晶具有较好的径向及纵向均匀性,这将给稳定器件工艺及提高材料利用率带来好处.
When the InP single crystal is grown by high-pressure liquid-sealed direct-pull (LEC) method, dislocation density can be effectively reduced by incorporating impurities into the InP single-crystal.When the carrier concentration reaches 3 × 10-18 cm -3, , The dislocation density is reduced to about 10 ~ 8cm ~ (-2), the compensation ratio is between 0.1 ~ 0.3. The effective partition coefficient of sulfur in InP is 0.68. Sputtering sulfur InP single crystal has good radial And vertical uniformity, which will benefit the process of device stabilization and material utilization.