论文部分内容阅读
采用I2作为输运剂,以单质Zn和Se为原料运用化学气相输运法制备了ZnSe晶体。比较了不同I2含量下所生长ZnSe晶体的性能,借助XRD、SEM和EDS检测方法分析了ZnSe晶体的结构、形貌和成分。结果表明:I2含量对ZnSe晶体性能具有重要的影响,通过比较3组I2含量所制备的ZnSe晶体,确定出当I2含量为4 mg/cm3时,所生长的ZnSe晶体具有较好的结晶质量,其晶格常数为5.668 nm。测定ZnSe中Zn与Se的原子分数比为1:0.99,且只有1个衍射峰(2θ=27.2°),其晶面指数为(111)。SEM图像表面比较平滑,没有明显气孔。在此条件下,ZnSe晶体的红外透过性能最好,红外透过率为53.07%~62.61%。其他两种I2含量下所生长的ZnSe晶体结晶质量较差,XRD图谱显示有多个衍射峰,SEM图像表面凹凸不平,有明显气泡和孔洞,并且其红外透过率较低。
ZnSe crystals were prepared by chemical vapor transport using I2 as a transporter and Zn and Se as the starting materials. The properties of ZnSe crystals grown under different I2 contents were compared. The structure, morphology and composition of ZnSe crystals were analyzed by XRD, SEM and EDS. The results show that the content of I2 has an important influence on the properties of ZnSe crystals. By comparing the ZnSe crystals prepared by I2 content in the three groups, the ZnSe crystals grown at I2 content of 4 mg / cm3 have better crystalline quality, Its lattice constant is 5.668 nm. The atomic ratio of Zn to Se in ZnSe was determined to be 1: 0.99 with only one diffraction peak (2θ = 27.2 °) with a crystal face index of (111). The SEM image has a smoother surface and no obvious pores. Under this condition, ZnSe crystal has the best infrared transmittance and the infrared transmittance is 53.07% ~ 62.61%. The ZnSe crystals grown under the other two I2 contents have poor crystalline quality and XRD patterns show multiple diffraction peaks. The surface of the SEM image is uneven with obvious bubbles and voids, and the infrared transmittance is low.