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A top-contact organic field-effect transistor(OFET) is fabricated by adopting a pentacene/1,1’-bis(di-4tolylaminophenyl) cyclohexane(TAPC) heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode.The performances of the heterojunction OFET,including output current,field-effect mobility,and threshed voltage,are all significantly improved by introducing the MoO3 thin buffer layer.The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer,thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
A top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene / 1,1’-bis (di-4tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source / drain electrode. These performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au / TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal / organic interface.