ZnO :Al(ZAO)是一种N型半导体薄膜材料 ,具有优良的光电特性 ,如低的电阻率和高的可见光透过率。本文利用射频磁控溅射技术在无机玻璃衬底上制备了ZAO透明导电薄膜 ,研究了工艺参数对其结构和光电特性的影响。结果表明原位制备的薄膜经热处理后具有c轴择优取向的六角纤锌矿结构 ,晶粒垂直于衬底方向柱状生长。薄膜的最小电阻率和可见光透过率分别为 8 7× 10 - 4 Ωcm和 85 %以上 ZnO: Al (ZAO) is an N-type semiconductor thin film material that has excellent photoelectric properties such as low resistivity and high visible light transmittance. In this paper, ZAO transparent conductive films were prepared on inorganic glass substrates by radio-frequency magnetron sputtering. The effects of process parameters on the structure and photoelectric properties were studied. The results show that the as-prepared films have a hexagonal wurtzite structure with c-axis preferred orientation after heat treatment, and the grains grow columnar perpendicular to the substrate. The minimum resistivity and visible light transmittance of the films are respectively 8 7 × 10 - 4 Ωcm and 85%