3.3.在InP和GaAs衬底上生长In-GaAs三元In_yGa_(1—y)As可以用外延方法生长在Ⅲ-V族二元衬底上。当铟的克分子份数y从y=0(纯GaAs)至y=1(纯InAs)连续变化时,这种材料的带隙也从Eg=1.424eV至Eg=0.360eV连续变化[8]。器件所敏感的最长波长被称为截止波长λ_(co),截止波长也相应地从λ_(co)=0.871μm至λ_(co)=0.344μm 发生变化。由于阻挡热生 3.3. Growth of In-GaAs Ternary In_yGa_ (1-y) As on InP and GaAs Substrates can be epitaxially grown on III-V binary substrates. The bandgap of this material also varies continuously from Eg = 1.424eV to Eg = 0.360eV when the mole fraction y of indium changes continuously from y = 0 (pure GaAs) to y = 1 (pure InAs) [8] . The longest wavelength sensitive to the device is called the cut-off wavelength λ co (co), and the cut-off wavelength accordingly changes from λ co = 0.871 μm to λ co = 0.344 μm. As blocking the heat generated