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报道了分子束外延生长 Ｈｇ０．６８ Ｃｄ０．３２ Ｔｅ 材料的光致发光测量结果。研究了原生样品和退火处理样品、以及氮离子注入样品的低温光致发光特征。对光致发光的测试结果进行拟合得到的禁带宽度， 与用红外透射谱得到的薄膜禁带宽相近； 其半峰宽和带尾能量较小， 显示了较高的薄膜质量。样品经过退火后带尾能量降低， 双晶衍射的半峰宽也有明显的变窄
Photoluminescence measurements of Hg0.68 Cd0.32 Te material grown by molecular beam epitaxy have been reported. The primary and annealed samples and the low-temperature photoluminescence characteristics of nitrogen-implanted samples were investigated. The bandgap obtained by fitting the photoluminescence results is close to the forbidden band width of the film obtained by infrared transmission spectroscopy. The half-width and the tail-end energy of the bandgap are small, which shows the high film quality. After annealing, the band tail energy is reduced, and the half width of the double crystal diffraction is also significantly narrowed