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用射频磁控溅射工艺在室温扩镓硅衬底上沉积Ga2O3膜,然后在氨气气氛下氮化Ga2O3膜得到GaN微米带,用X射线衍射(XRD)、扫描电镜(SEM)、选区电子衍射(SAED)、X射线光电子能谱(XPS)及光致发光谱(PL)对薄膜样品进行了结构、表面形貌、组分及发光特性分析。SEM图像显示直径约为100nm~300nm微米带随机分布在GaN薄膜表面。XRD、XPS及SAED分析表明GaN微米带呈六方闪锌矿多晶结构,择优沿[001]方向生长。Pl显示了可能由量子限制效应引起的发光峰,其相对于报道的GaN晶体发光峰有显著蓝移。
The Ga2O3 film was deposited on the gallium-doped silicon substrate at room temperature by radio-frequency magnetron sputtering, and then the GaN micro-band was obtained by nitridation of Ga2O3 film under ammonia gas atmosphere. X-ray diffraction (XRD), scanning electron microscopy (SAED), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to analyze the structure, surface morphology, composition and luminescence properties of the films. The SEM images show that the diameter of about 100nm ~ 300nm micron band randomly distributed on the GaN film surface. XRD, XPS and SAED analysis showed that the microstructure of GaN micro-band hexagonal sphalerite polycrystalline structure, the preferred growth along the [001] direction. Pl shows a luminescence peak that may be caused by the quantum confinement effect, which has a significant blue shift relative to the luminescence peak of the reported GaN crystal.