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利用带隙电压基准的基本原理,结合自偏置共源共栅电流镜以及适当的启动电路,设计了一种新型基准电压源。获得了一个低温度系数、高电源抑制比的电压基准。通过对输出端添加运算放大器,把带隙基准电路产生的1.2 V电压提高到3.5 V,提高了芯片性能。用Cadence软件和CSMC的0.5μm CMOS工艺进行了仿真,结果表明,当温度在-20～+120℃,温度系数为9.3×10-6/℃,直流时的电源抑制比为-82 dB。该基准电压源能够满足开关电源管理芯片的使用要求,并取得了较好的效果。
Using the basic principle of bandgap voltage reference, a novel reference voltage source is designed with a self-bias cascode current mirror and an appropriate startup circuit. Obtained a low temperature coefficient, high power supply rejection ratio of the voltage reference. By adding an op amp to the output, raising the 1.2 V from the bandgap reference to 3.5 V improves chip performance. Simulation results using Cadence software and CSMC 0.5μm CMOS technology show that the power supply rejection ratio at dc is -82 dB at temperature of -20 ~ +120 ℃ and temperature coefficient of 9.3 × 10-6 / ℃. The reference voltage source to meet the switching power management chip usage requirements, and achieved good results.