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对射频溅射法制备的ａＳｉ∶Ｈ∶Ｙ薄膜进行电子衍射、红外吸收和卢瑟福背散射测试，结果表明，退火可从以下几方面改变膜的结构和性质：使合金膜晶化，从非晶态向多晶或单晶态转化；改变原子间的键合状态，使某些ＳｉＨ键断裂，形成更多的ＳｉＹ键；Ｙ原子向Ｓｉ衬底方向扩散，使膜表面Ｙ的浓度降低，Ｓｉ∶Ｙ合金层厚度增大。
The electron diffraction, infrared absorption and Rutherford backscattering tests on the films of aSi:H:Y prepared by RF sputtering show that annealing can change the structure and properties of the films from the following aspects: , From amorphous to polycrystalline or monocrystalline state transformation; change the bonding state between atoms, so that some Si H bond fracture, the formation of more Si Y bond; Y atoms to the direction of the proliferation of Si substrate so that The concentration of the film surface Y is decreased, and the thickness of the Si: Y alloy layer is increased.