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一、前言磁泡常规器件的许多功能是通过Ni-Fe合金薄膜图案完成的。因此,制备性能合乎器件要求的Ni-Fe膜是器件工艺重要的一环。磁泡器件对Ni-Fe膜的要求是:膜厚适当、矫顽力Hc低和磁阻系数η大。制备Ni-Fe膜曾采用电子束蒸发法,现大多改用高频溅射。和蒸发法相比,高频溅射有不少优点:(1)沉积的薄膜成份与靶的成份一致,这使得膜的成份和矫顽力易于控制;(2)沉积速率和膜厚容易调节;(3)无入射角影响;(4)薄膜与衬底结合牢固,使器件有较高的成品率。
I. INTRODUCTION Many functions of conventional bubble devices are accomplished through the pattern of Ni-Fe alloy thin films. Therefore, the performance of the device to meet the performance requirements of Ni-Fe film is an important part of the device technology. Bubble devices on the Ni-Fe film requirements are: appropriate film thickness, coercivity Hc low and reluctance η large. Preparation of Ni-Fe film has used electron beam evaporation method, are mostly used to high-frequency sputtering. Compared with the evaporation method, there are many advantages of high-frequency sputtering: (1) deposited film composition and target composition, which makes the film composition and coercivity easy to control; (2) deposition rate and film thickness easy to adjust; (3) no angle of incidence effects; (4) the film and the substrate combined with a solid, so that the device has a higher yield.