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从理论上对n~(+)在p上和p在n上的HgcdTe光电二极管的性能再度进行了分析。假定光电二极管的性能是由于受俄歇机理控制的热发生的结果。对于工作于77K、采用0.1eV基材料的两种类型的HgcdTe光电二极管,均考虑了结位置对R_0A积、光电增益以及噪声的影响。尤其是,详细分析了两种结构的作为截止波长和温度的函数的R_0A积。就假定的同质结基区掺杂浓度而言(对于n~(+)在p上的结构,Na=5×10~(15)cm~(-3);对于p在n上的结构,Nd=5×10~(14)cm~(-3),p在n上的结构的p型顶层对有效R_0A积的影响要此n~(+)在R0A上的结的n~(+)型层对R_0A积的影响更严重。因此,为了消除顶层的这种不利影响(特别是在使用p在n上的结的情况下),必须有一层宽带隙顶层。对于给定的截止波长,在低于77K的温度范围内,p在n上的光电二极管的A积的理论值比n~(+)在p上的光电二极管的略微大一些,这是由于较低掺杂的结果。在较高温度范围内,对于波长很长的光电二极管,采用p型基本嚣件则更有利。将计算结果同其他作者报告的实验数据进行了比较。
The performance of HgcdTe photodiodes with n ~ (+) on p and p on n is theoretically analyzed again. The performance of the photodiode is assumed to be the result of heat being controlled by the Auger mechanism. For both types of HgcdTe photodiodes operating at 77K with a 0.1eV base material, the effect of the junction location on the R_A product, the opto-electronic gain, and the noise is taken into account. In particular, the R_A product of the two structures as a function of cutoff wavelength and temperature is analyzed in detail. Na ~ 5 × 10 ~ (15) cm ~ (-3) for the assumed homojunction base doping concentration (n ~ (+)) structure on p; for the structure of p on n, Nd = 5 × 10 ~ (14) cm ~ (-3). The influence of the p-type top layer of p structure on n on the effective R_A product of n ~ (+ The effect of the type layer on the R 0 A product is more severe, so there is a need for a wide bandgap top layer in order to eliminate this detrimental effect of the top layer (especially with p on the n junction.) For a given cutoff wavelength, In the temperature range below 77K, the theoretical value of the p-value of the photodiode in n on p is slightly larger than that of the photodiode in n ~ (+) on p, due to the lower doping In the higher temperature range, it is more advantageous to use a p-type basic device for very long wavelength photodiodes, and the results are compared with the experimental data reported by other authors.