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对FP半导体激光器(从FP-LD)在另一个FP半导体激光器(主FP-LD)的强光注入下,其调制响应特性进行了理论研究.研究结果表明:从FP-LD的调制响应特性与外部光注入强度、主从FP-LD之间的中心频率失谐以及模式间隔差等密切相关.随着主FP-LD注入强度的逐渐增加,从FP-LD的3dB调制带宽将增大;进一步地增大注入强度将导致弛豫振荡峰的前端已经降到3dB以下,从而使3dB调制带宽迅速减小.随着主从FP-LD之间的中心频率失谐量△f的逐渐增加,对于较小的光注入强度,3dB带宽呈现单调增加的趋势,直到FP-LD工作在单周期(P1)状态;对于较大的光注入强度,FP-LD注入锁定的频率失谐范围较大,在注入锁定范围内,可观察到随着失谐量△f的逐渐增加,FP-LD的3dB调制带宽先增大后减小.对于给定的光注入强度以及频率失谐量,FP-LD的3dB调制带宽随模式间隔差的分布存在两个极大值.通过合理地选择系统参数,可以使FP-LD的频率响应特性得到显著改善,其3dB调制带宽可达自由运转时的5.5倍.
The modulation response characteristics of the FP semiconductor laser (FP-LD) under the intense light injection of another FP semiconductor laser (FP-LD) have been studied theoretically.The results show that the modulation response characteristics of the FP-LD The intensity of external light injection is closely related to the center frequency detuning between the FP-LD and the mode-gap, etc. The 3dB modulation bandwidth from the FP-LD will increase as the intensity of the main FP-LD increases gradually Increasing the injection strength causes the front end of the relaxation oscillation peak to drop below 3dB, causing the 3dB modulation bandwidth to rapidly decrease.With the gradual increase of the center frequency detuning Δf between the master-slave FP-LD, The smaller the intensity of the light injection, the 3dB bandwidth presents a monotonically increasing trend until the FP-LD operates in the single-cycle (P1) state. For larger light injection intensities, the FP-LD injection locking frequency detuning range is larger. Injection-locked range, it can be observed with the gradual increase in detuning △ f, FP-LD 3dB modulation bandwidth first increases and then decreases.For a given light injection intensity and frequency detuning, FP-LD There are two maxima for the distribution of 3dB modulation bandwidth with the mode interval difference. By reasonably choosing the system System parameters, can make FP-LD’s frequency response characteristics have been significantly improved, the 3dB modulation bandwidth up to 5.5 times the free running.