利用透射电子显微镜(TEM)详细分析了不同剂量的质子辐照纯铝薄膜样品的微观结构,质子的能量E=160keV.实验表明,质子辐照能够在Al薄膜中诱发空位位错圈,在实验范围内,位错密度随辐照剂量的增加而增加;质子辐照在1×1011—4×1011/mm2范围内随辐照剂量的增加,位错圈数量密度以及位错圈尺寸都随之增加.在较高剂量6×1011/mm2辐照下,位错圈数量密度减小,但其尺寸显著增加,空位倾向于形成较大的空位簇缺陷,且样品中出现胞状结构,胞壁之间有角度很小的取向差,这种胞状结构与材料力学性能的退化关系密切. The microstructures of proton-irradiated pure aluminum thin films with different doses of proton energy E = 160keV were analyzed by transmission electron microscope (TEM) .Experiments show that proton irradiation can induce vacancy dislocation circle in Al thin films. In experiments , The dislocation density increased with the increase of irradiation dose. With the increase of irradiation dose, the number density of dislocation loops and the size of dislocation loops in the range of 1 × 1011-4 × 1011 / mm2 Increased at a higher dose of 6 × 1011 / mm2 irradiation, the number density of dislocation loops decreased but its size increased significantly, vacancies tended to form larger vacancy cluster defects, and cell-like structures appeared in the samples There is a small angle between the poor orientation, the cell structure and material properties of the degradation is closely related.