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本文采用Cu 25.71Zn 4.18Al和Cu 24.18Zn 4.16Al O.99Ni(Wt.%)铜基合金材料,对其双程记忆规律和机理进行了探讨。发现经SME训练后CuZnAl及CuZnAlNi两种合金呈现不同的双程记忆规律,前者与后者相比,其双程记忆性能比较稳定。为探讨双程记忆机理,本文在测定电阻-温度曲线的基础上,得出了室温残余电阻和训练次数、热循环次数间的关系。试验通过透射电镜观察了双程训练时亚结构和残余母相的变化,得出由于CuZnAl和CuZnAlNi两种合金位错增殖速率不同导致二者呈现不同的双程记忆规律,表明双程记忆效应的产生与训练过程中位错引入有关。在训练中引入适量位错可使p→M中形成的马氏体择尤取向,从而合金具有双程记忆性能。
In this paper, we study the regularity and mechanism of two-way memory using Cu 25.71Zn 4.18Al and Cu 24.18Zn 4.16Al O.99Ni (Wt.%) Copper alloy. It is found that the CuZnAl and CuZnAlNi alloys exhibit different two-way memory behaviors after SME training. The former has more stable two-way memory than the latter. In order to explore the two-way memory mechanism, the paper obtained the relationship between the room temperature residual resistance and the number of training cycles and the number of thermal cycles on the basis of measuring the resistance-temperature curve. The transmission electron microscope was used to observe the changes of substructure and residual parent phase during the two-way training. The results showed that the two-way memory was different due to the different diffusion rate of CuZnAl and CuZnAlNi, indicating that the two-way memory effect Produced with the introduction of dislocation in the training process. The introduction of proper amount of dislocations during training can make the martensite formed in p → M to be more oriented, so that the alloy has two-way memory performance.