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SnO_2 nanowires and ZnO nanorods were grown on the surface of thin film by heat treatment of mental Sn and Zn under Ar gas flow and O_2 atmospheric pressure.The sensitivity of the SnO_2 thin film device on which grown nanowires to CO gas(concentration of 5000μg/g)was 50% at the operating temperature of 200℃.In case of using Pt as catalysts,the sensitivity was enhanced and operating temperature was reduced(sensitivity of 70% at the operating temperature of 150℃). The sensitivity of the ZnO nanorods device using Cu as catalysts to NO_x gas was 90% at the operating temperature of 200℃.It was found that the sensitivity to CO and NO_x gases for the device on which grown nanostructures was much higher than those for general thin films devices.
SnO 2 nanowires and ZnO nanorods were grown on the surface of thin film by heat treatment of mental Sn and Zn under Ar gas flow and O 2 atmospheric pressure. The sensitivity of the SnO 2 thin film device on which grown nanowires to CO gas (concentration of 5000 μg / g) was 50% at the operating temperature of 200 ° C. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced (sensitivity of 70% at the operating temperature of 150 ° C). The sensitivity of the ZnO nanorods device using Cu as catalysts to NO x gas was 90% at the operating temperature of 200 ° C. It was found that the sensitivity to CO and NO x gases for the device on which grown nanostructures was much higher than those for general thin films devices.