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本文报道ＺｎＳｅ基ⅡⅥ族宽带发光材料分子束外延系统的建立、ｐ型掺杂用等离子体活性氮源的研制、两性掺杂的ＺｎＳｅ材料的生长。实验证明国产ＭＢＥ设备能够自洽生长优质ＺｎＳｅ单晶薄膜；用自制的等离子体活性氮源作受主掺杂剂，获得了ｐＺｎＳｅ单晶薄膜，经ＣＶ测量发现，［Ｎａ］［Ｎｄ］高达～５×１０１７·ｃｍ－３；用国产粉末状ＺｎＣｌ２源作施主掺杂剂，获得了ｎＺｎＳｅ单晶薄膜，Ｈａｌ测量表明［ｎ］高达～２３×１０１９·ｃｍ－３。生长速度均控制在～０５μｍ／ｈ。
This paper reports the development of molecular beam epitaxy system of ZnSe groupⅡ-Ⅵ broad-band luminescent materials, the development of plasma-active nitrogen source for p-type doping, and the growth of amphiphilic ZnSe materials. Experiments show that domestic MBE equipment can self-consistent growth of high-quality ZnSe single crystal thin film; home-made plasma active nitrogen source as acceptor dopant, obtained p ZnSe single crystal thin film measured by C V found [Na] [Nd] up to ~ 5 × 1017 cm-3; with domestic powder ZnCl2 source as the donor dopant, obtained n ZnSe single crystal film, Hal measurements show that [n] up to ~ 2 3 × 1019 · cm- 3. Growth rate is controlled at ~ 0 5μm / h.