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本文探讨了用Au-Si合金在n-GaP上形成欧姆接触的条件,用扫描电镜(SEM)研究了Au-Si电极表面的形貌及其随微合金温度、时间的变化情况。发现M-S接触的欧姆特性与表面微结晶状态有关。借助俄歇能谱(AES)和能量色散谱(EDAS)初步分析了Au-Si/n-GaP系统接触的界面含有Au-Ga金属间化合物以及P和Si杂质。从金属学观点解释了在微合金条件下界面反应、表面形貌的变化规律。实验结果表明,在最佳微合金条件下,Si-Ga替位扩散是获得良好欧姆接触的实质。
In this paper, the conditions for the formation of ohmic contacts on n-GaP with Au-Si alloy are investigated. The morphology of Au-Si electrodes and the variation with time and temperature of the Au-Si electrodes are investigated by scanning electron microscopy (SEM). The ohmic nature of the M-S contact is found to be related to the surface micromorphology. The contact interface of Au-Si / n-GaP system was analyzed by Auger energy spectroscopy (AES) and energy dispersive spectroscopy (EDAS). The Au-Ga intermetallics and the impurities of P and Si were analyzed. From the metallographic point of view, it explains the variation of interfacial reaction and surface morphology under the condition of microalloying. Experimental results show that, in the best micro-alloy conditions, Si-Ga for-diffusion is to obtain a good ohmic contact.