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据美国RCA公司报导,该公司研制出了一种先进的MOS工艺,这种工艺使六角形单元紧密地组合在一块芯片上.采用此工艺已经批量生产了性能改进的新型功率MOS场效应管.采用称做“Mega FET”的工艺,RCA可以制造出每平方英寸具有一百万个单元的MOSFET,该公司还计划在明年制造出单元密度更高的器件.以前,封装密度被限制在每平方英寸50万个单元的范围内.现在在给定面积内单元数急剧增加,大大减小了功率MOS场效应管的源
According to a report by the American RCA, the company has developed an advanced MOS process that tightly integrates hexagonal cells onto a single chip, a new power MOS FET with improved performance has been mass-produced using this process. Using a process called “Mega FET”, RCA can produce MOSFETs with 1 million cells per square inch, and the company plans to make devices with higher cell densities next year.Packet density was previously constrained to be on a square In the range of 500,000 units.At present, the number of units in a given area increased sharply, greatly reducing the power MOS FET source