用等离子体化学气相沉积（PCVD）法制备：a－Si：N薄膜材料（衬底温度20O℃～350℃），用固相晶化法（SPC）获得多晶硅薄膜（退火温度500℃～650℃）,用X射线衍射法测得平均晶粒尺寸依赖于退火温度和沉积条件，随着沉积温度的降低需要较高的退火温度,用SEM观测形貌测得平均晶粒大小为1,0～1,5μm A-Si: N thin film material (substrate temperature: 20 ° C ~ 350 ° C) was prepared by plasma CVD (PCVD), and a polycrystalline silicon thin film was obtained by solid phase crystallization (SPC) ). The average grain size determined by X-ray diffraction depends on the annealing temperature and the deposition conditions. The higher annealing temperature is required as the deposition temperature is reduced. The average grain size measured by SEM is 1,0 ~ 1,5 μm