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采用一维有限差分方法，对生长在Ｓｉ（００１）衬底上的Ｓｉ１－ｘＧｅｘ应变基区异质结双极晶体管（ＨＢＴ）的直流特性进行了数值分析，给出了高斯掺杂情形下，基区中不同Ｇｅ分布的Ｓｉ１－ｘＧｅｘＨＢＴ的共射极电流放大系数图、Ｇｕｍ－ｍｅｌ图和平衡能带图；与Ｓｉ双极同质结晶体管（ＢＪＴ）的直流特性作了对比，结果表明基区中Ｇｅ的引入有效地改善了晶体管的直流性能；其次对基区中Ｇｅ分布与ｐ型杂质在基区－集电区交界处的不一致进行了模拟，证实了基区杂质向集电区扩散产生的寄生势垒使集电极电流密度下降这一实验结果．
The DC characteristics of Si1-xGex HBT (HBT) grown on Si (001) substrate were numerically analyzed by one-dimensional finite difference method. In the case of Gaussian doping, Co-emitter current magnification, Gum-mel and equilibrium band diagrams of Si1-xGexHBTs with different Ge distributions in the base region were compared with that of Si bipolar homojunction transistors (BJTs). The results showed that The introduction of Ge in the region effectively improves the DC performance of the transistor. Secondly, the Ge distribution in the base region and the inconsistency of the p-type impurities at the junction of the base region and the collector region are simulated and it is confirmed that the base region diffuses into the collector region The resulting parasitic barrier reduces the collector current density.