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报道了一种结构新颖的Ｈ型垂直腔面发射激光器。器件是由钨丝掩膜一次质子轰击和选择腐蚀相结合制备的，实验已实现在脉宽为２０μｓ，占空比为１１０的脉冲电流条件下的室温激射。
A novel H-type vertical cavity surface-emitting laser is reported. The device is prepared by a combination of proton bombardment and selective etching of a tungsten mask. The experiment has achieved room-temperature lasing at a pulse current with a pulse width of 20 μs and a duty cycle of 110.