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通过对绝缘栅双极晶体管（ＩＧＢＴ）直流参数温度特性的测试分析并与ＶＤＭＯＳＦＥＴ进行比较，从中得出ＩＧＢＴ能够承受更大的电流密度，其导通压降在高温下较之ＶＤＭＯＳＦＥＴ有较大的优势。
By testing and analyzing the temperature characteristics of IGBT parameters and comparing with VDMOSFET, it can be concluded that IGBT can withstand larger current densities. The turn-on voltage drop is larger than that of VDMOSFET at high temperature Advantage.