日本夏普中央研究所采用在P型GaAs衬底上生长n型GaAs层并设电流阻挡层的办法降低了可见光半导体激光器的阈值。所研制的可见光半导体激光器,其发射波长为781nm,阈值电流为20nA,同类器件波长为760nm时,阈值电流为25mA,波长为745nm时,阈值电流为35mA,全都实现了室温连续工作。纵、横模均为单模。λ=785nm的器件于70℃下加速试验的结果,1000小时阈 Japan’s Sharp Central Research Institute of P-type GaAs substrate growth of n-type GaAs layer and set the current barrier layer reduces the visible light semiconductor laser threshold. The developed visible light semiconductor laser has an emission wavelength of 781 nm and a threshold current of 20 nA. When the wavelength of the same type of device is 760 nm, the threshold current is 25 mA and the threshold current is 35 mA at a wavelength of 745 nm. All of them achieve continuous operation at room temperature. Vertical and horizontal mode are single mode. λ = 785nm device at 70 ℃ accelerated test results, 1000 hours threshold