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非全耗尽SOI/MOS晶体管由于存在“Kink效应”而限制了它的应用范围。本文考虑了沟道夹断区的碰撞电离和横向寄生晶体管效应,对浮置衬底SOI/nMOS晶体管的电流—电压特性曲线进行了理论计算,讨论了Kink效应的产生机理。计算结果与实验符合甚好。对器件参数的分析可以定性地指导抑制Kink效应的器件优化设计。
Non-fully depleted SOI / MOS transistors limit their scope of application due to the “Kink effect.” In this paper, the impact ionization and lateral parasitic transistor effects in the channel pinch-off region are considered. The current-voltage characteristic curve of the floating substrate SOI / nMOS transistor is theoretically calculated and the mechanism of Kink effect is discussed. The calculated results are in good agreement with the experiment. The analysis of the device parameters can qualitatively guide the device optimization design that suppresses the Kink effect.