自从苏联人开始研究激光退火以来,进行了许多工作去研究其现象,考查其用于半导体加工的潜力。此文中评述了激光退火用于处理离子注入产生的损伤,重长沉积的Si层,以及金属膜和半导体产生反应的机理。目前有两种不同的方法。一种是用脉冲或大功率激光器使材料熔融,另一种是用连续的小功率激光器使材料在固相中产生原子运动即所谓重长。 Since the Soviet Union started to study laser annealing, much has been done to study its phenomenon and examine its potential for semiconductor processing. This paper reviews the mechanisms by which laser annealing is used to treat damage caused by ion implantation, heavily deposited Si layers, and the reaction between metal films and semiconductors. There are currently two different ways. One is to use a pulsed or high power laser to melt the material, the other is to use a continuous low power laser to make the material produce atomic motion in the solid phase, the so-called heavy length.